Integrated fan-out stacked package with fan-out redistribution layer (RDL)

ABSTRACT

A method includes forming a first through-via from a first conductive pad of a first device die, and forming a second through-via from a second conductive pad of a second device die. The first and second conductive pads are at top surfaces of the first and the second device dies, respectively. The first and the second conductive pads may be used as seed layers. The second device die is adhered to the top surface of the first device die. The method further includes encapsulating the first and the second device dies and the first and the second through-vias in an encapsulating material, with the first and the second device dies and the first and the second through-vias encapsulated in a same encapsulating process. The encapsulating material is planarized to reveal the first and the second through-vias. Redistribution lines are formed to electrically couple to the first and the second through-vias.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a divisional of U.S. patent application Ser. No.15/130,211, filed Apr. 15, 2016, entitled “Integrated Fan-out Packageand the Methods of Manufacturing,” which is a continuation-in-partapplication of U.S. patent application Ser. No. 15/004,240, filed Jan.22, 2016, entitled “Integrated Fan-out Package and the Methods ofManufacturing,” which further claims the benefit of U.S. ProvisionalApplication No. 62/221,443, filed Sep. 21, 2015, and entitled“Integrated fan-out Package and the methods of manufacturing,” whichapplications are hereby incorporated herein by reference.

BACKGROUND

Stacked dies are commonly used in Three-Dimensional (3D) integratedcircuits. Through the stacking of dies, the footprint (form factor) ofpackages is reduced. In addition, the metal line routing in the dies issignificantly simplified through the formation of stacked dies.

In some applications, a plurality of dies is stacked to form a diestack, wherein the plurality of dies include Through-Substrate Vias(TSVs, sometimes known as through-silicon vias). The total count of thestacked dies may sometimes reach eight or more. When such a die stack isformed, a first die is first bonded onto a package substrate throughflip-chip bonding, wherein solder regions/balls are reflowed to join thefirst die to the package substrate. A first underfill is dispensed intothe gap between the first die and the package substrate. The firstunderfill is then cured. A test is then performed to ensure that thefirst die is connected to the package substrate properly, and that thefirst die and the package substrate function as desired.

Next, a second die is bonded onto the first die through flip-chipbonding, wherein solder regions/balls are reflowed to join the seconddie to the first die. A second underfill is dispensed into the gapbetween the second die and the first die. The second underfill is thencured. A test is then performed to ensure that the second die isconnected to the first die and the package substrate correctly, and thefirst die, the second die, and the package substrate function asdesired. Next, a third die is bonded onto the second die through thesame process steps as for bonding the first die and the second die. Theprocesses are repeated until all the dies are bonded.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A through 1I illustrate the cross-sectional views of intermediatestages in the formation of a fan-out package in accordance with someembodiments.

FIGS. 2A through 2I illustrate the cross-sectional views of intermediatestages in the formation of a fan-out package in accordance with someembodiments.

FIGS. 3A through 3J illustrate the cross-sectional views of intermediatestages in the formation of a fan-out package in accordance with someembodiments.

FIGS. 4A through 4J illustrate the cross-sectional views of intermediatestages in the formation of a fan-out package in accordance with someembodiments.

FIGS. 5 through 10 illustrate the cross-sectional views of fan-outpackages in accordance with some embodiments.

FIG. 11 illustrates a top view of a fan-out package in accordance withsome embodiments.

FIG. 12 illustrates a process flow for forming a fan-out package inaccordance with some embodiments.

FIGS. 13A through 13C illustrate some top structures used for connectingthe respective device dies to overlying redistribution layers inaccordance with some embodiments.

FIG. 14 illustrates an exemplary notation representing the structuresshown in FIGS. 13A through 13C in accordance with some embodiments.

FIGS. 15A through 15K illustrate the cross-sectional views ofintermediate stages in the formation of a fan-out package in accordancewith some embodiments.

FIGS. 16A and 16B illustrate a cross-sectional view and a top view,respectively, of a fan-out package in accordance with some embodiments.

FIGS. 17A and 17B illustrate a cross-sectional view and a top view,respectively, of a fan-out package in accordance with some embodiments.

FIGS. 18A through 18C illustrate the cross-sectional views of fan-outpackages including memory cubes in accordance with some embodiments.

FIG. 19 illustrates a process flow for forming a fan-out package using asingle molding process in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “underlying,” “below,”“lower,” “overlying,” “upper” and the like, may be used herein for easeof description to describe one element or feature's relationship toanother element(s) or feature(s) as illustrated in the figures. Thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. The apparatus may be otherwiseoriented (rotated 90 degrees or at other orientations) and the spatiallyrelative descriptors used herein may likewise be interpretedaccordingly.

Integrated fan-out packages and the methods of forming the same areprovided in accordance with various exemplary embodiments. Theintermediate stages of forming the fan-out packages are illustrated.Some variations of some embodiments are discussed. Throughout thevarious views and illustrative embodiments, like reference numbers areused to designate like elements.

FIGS. 1A through 1I illustrate the cross-sectional views of intermediatestages in the formation of a fan-out package in accordance with someembodiments. The steps shown in FIGS. 1A through 1I are also illustratedschematically in the process flow 200 as shown in FIG. 12. In thesubsequent discussion, the process steps shown in FIGS. 1A through 1Iare discussed referring to the process steps in FIG. 12.

Referring to FIG. 1A, device die 10 (which is a part of the respectivewafer 2 that has a plurality of device dies) is provided. In accordancewith some embodiments of the present disclosure, device die 10 is alogic die, which may be a Central Processing Unit (CPU) die, a MicroControl Unit (MCU) die, an input-output (IO) die, a BaseBand (BB) die,or an Application processor (AP) die. Although not shown, device die 10may include a semiconductor substrate, wherein active devices such astransistors and/or diodes are formed at a top surface of thesemiconductor substrate. Furthermore, metal lines and vias (not shown)are formed in an interconnect structure (not shown), which is over thesemiconductor substrate, of device die 10 to interconnect the integratedcircuit devices in device die 10.

Metal pads 12 are formed at the top surface 10A of device die 10. Thetop surface 10A of device die 10 is also referred to as a front surface.Device die 10 has back surface 10B, which may also be the back surfaceof the respective semiconductor substrate in device die 10. Metal pads12 may be aluminum pads, copper pads, aluminum copper pads, or the like.Metal pads 12 may be formed in a first surface region of device die 10,and a second surface region of device die 10 has no metal pads formedtherein. For example, in accordance with some exemplary embodiments asshown in FIG. 1A, the right surface region have metal pads 12 therein,and the left surface region have no metal pads.

FIGS. 1B and 1C illustrate the formation of through-vias 14. Therespective step is illustrated as step 202 in the process step shown inFIG. 12. In accordance with some embodiments, as shown in FIG. 1B, photoresist 16 is formed over wafer 2, and is then patterned to form openings15, through which a portion of each of metal pads 12 is exposed.Through-vias 14 are then plated in openings 15. Photo resist 16 is thenremoved, resulting in the structure in FIG. 1C. In accordance with someembodiments of the present disclosure, no seed layer is formed on wafer2 before the plating, and metal pads 12 act as the seed layer. Inaccordance with alternative embodiments, a seed layer (not shown) isformed before photo resist 16 is formed, and through-vias 14 are platedon the seed layer. After the removal of photo resist 16, the portions ofthe seed layer not directly underlying through-vias 14 are removed in anetching process. The remaining portions of the seed layer thus becomethe bottom portions of through-vias 14.

Next, referring to FIG. 1D, device die 20 is adhered to device die 10through Die-Attach Film (DAF) 22. The respective step is illustrated asstep 204 in the process step shown in FIG. 12. The back surface ofdevice die 20 is adhered to the front surface 10A of device die 10, andhence the corresponding die stacking is a face-to-back stacking. Inaccordance with some embodiments of the present disclosure, device die20 is a memory die, which may be a Flash die, a static Random AccessMemory (SRAM) die, a low power Double-Data-Rate (DDR) die, or the like.Although not shown, device die 20 may be a single memory die or astacked memory dies. Also device die 20 may also include a semiconductorsubstrate, wherein active devices such as transistors and/or diodes areformed at a top surface of the semiconductor substrate. Furthermore,metal lines and vias (not shown) are formed in the interconnectstructure of device die 20 to interconnect the integrated circuitdevices in device die 20. The back surface of device die 20 may also bethe back surface of the semiconductor substrate in device die 20.

FIG. 11 illustrates an exemplary top view of device die 10 and thecorresponding overlying device die 20 and through-vias 14. In accordancewith some exemplary embodiments, device die 20 overlaps a corner regionof device die 10, with through-vias 14 being adjacent to two sidewallsof device die 20. In accordance with alternative embodiments, device die20 overlaps a center region of device die 10, and through-vias 14encircle device die 20. Device die 20 and through-vias 14 may also belaid out using other layout schemes.

DAF 22 is an adhesive film, and may be formed of a polymer. Inaccordance with some embodiments of the present disclosure, DAF 22 has alow thermal conductivity, which may be lower than about 0.5 W/m*K.

Referring back to FIG. 1D, device die 20 includes conductive pillars 28,which may be metal pillars, formed in surface dielectric layer 26. Metalpillars 28 may be formed of copper, nickel, palladium, gold,multi-layers thereof, and/or alloys thereof. Surface dielectric layer 26may be formed of polybenzoxazole (PBO), polyimide, benzocyclobutene(BCB), or the like. Underlying metal pillars 28 may reside metal pads24, which may be formed of copper, aluminum, or other metals.

Referring to FIG. 1E, encapsulating material 30 is encapsulated ondevice die 20 and through-vias 14. The respective step is illustrated asstep 206 in the process step shown in FIG. 12. Encapsulating material 30is dispensed as a fluid and then being compressed and cured, forexample, in a thermal curing process. Encapsulating material 30 fillsthe gaps between device die 20 and through-vias 14. Encapsulatingmaterial 30 may include a molding compound, a molding underfill, anepoxy, or a resin. After the encapsulating process, the top surface ofencapsulating material 30 is higher than the top ends of metal pillars28 and through-vias 14.

Next, a planarization step such as a mechanical grinding, a ChemicalMechanical Polish (CMP) and/or a combination of both is performed toplanarize encapsulating material 30, through-vias 14, surface dielectriclayer 26, and metal pillars 28. The respective step is also illustratedas step 206 in the process step shown in FIG. 12. The resultingstructure is also shown in FIG. 1E. Due to the planarization, the topsurfaces of through-vias 14 are level (coplanar) with the top surfacesof metal pillars 28, and are level (coplanar) with the top surface ofencapsulating material 30.

Referring to FIG. 1F, one or more dielectric layer 32 and the respectiveRedistribution Layers (RDLs) 34 are formed over encapsulating material30, through-vias 14, and metal pillars 28. The respective step isillustrated as step 208 in the process step shown in FIG. 12. Inaccordance with some embodiments of the present disclosure, dielectriclayers 32 are formed of a polymer(s) such as PBO, polyimide, BCB, or thelike.

RDLs 34 are formed to electrically couple to metal pillars 28 andthrough-vias 14. It is noted that the illustration of RDLs 34 throughoutall figures is schematic. For example, RDLs 34 are actually patterned asa plurality of discrete portions separated from each other by therespective dielectric layer(s). Each of the discrete portions of RDLs 34is connected to the respective underlying metal pillars 28 and/orthrough-vias 14. RDLs 34 may also interconnect some metal pillars 28 tothe respective through-vias 14. RDLs 34 may include metal traces (metallines) and vias underlying and connected to the metal traces. Inaccordance with some embodiments of the present disclosure, RDLs 34 areformed through plating processes, wherein each of RDLs 34 includes aseed layer (not shown) and a plated metallic material over the seedlayer. The seed layer and the plated metallic material may be formed ofthe same material or different materials.

FIG. 1G illustrates the backside grinding of device die 10, which isgrinded from its backside (the illustrated bottom side). The respectivestep is illustrated as step 210 in the process step shown in FIG. 12.Accordingly, the thickness of device die 10 is reduced from thickness T1(FIG. 1F) to thickness T2 as shown in FIG. 1G.

FIG. 1H illustrates the formation of electrical connectors 36 inaccordance with some exemplary embodiments of the present disclosure.The respective step is illustrated as step 212 in the process step shownin FIG. 12. Electrical connectors 36 are electrically coupled to RDLs34, metal pillars 28, and/or through-vias 14. The formation ofelectrical connectors 36 may include placing solder balls over RDLs 34and then reflowing the solder balls. In accordance with alternativeembodiments of the present disclosure, the formation of electricalconnectors 36 includes performing a plating step to form solder regionsover RDLs 34, and then reflowing the solder regions. Electricalconnectors 36 may also include metal pillars, or metal pillars andsolder caps, which may also be formed through plating.

In addition, Integrated Passive Device (IPD) 39 may be bonded to RDLs34. IPD 39 may be used for tuning the performance of the resultingpackage, and may include a capacitor, for example. In accordance withalternative embodiments, no IPD 39 is bonded. Throughout thedescription, the combined structure including device dies 10 and 20,through-vias 14, encapsulating material 30, RDLs 34, and dielectriclayers 32 will be referred to as composite wafer 38, which is acomposite wafer including a plurality of device dies 10 and 20.

In subsequent steps, composite wafer 38 is sawed apart into a pluralityof packages 40, each including one of device dies 10, one of device dies20, and the corresponding through-vias 14. The respective step isillustrated as step 214 in the process step shown in FIG. 12. Package 40in accordance with some embodiments is thus formed with a singleencapsulating (molding) process, although package 40 includes two levelsof device dies stacked together. This is different from conventional diestacking processes, wherein two levels of device dies are encapsulatedusing two encapsulating processes. In addition, no package substrate isused in package 40. This causes the advantageous reduction in thethickness of package 40, and hence package 40 is suitable for mobileapplications that require very thin packages.

In accordance with some embodiments, while package 40 is a fan-outpackage since RDLs 34 extends beyond the edges of device die 20, thefootprint (the top-view area) of package 40 is the same as the top-viewarea of device die 10, providing the top-view area of device die 10 isadequate for disposing all electrical connectors 36. Accordingly, thetop-view area of package 40 is small. In addition, the distance betweenmetal pads 12 and electrical connectors 36 is small, resulting in theimprovement in the electrical performance of the resulting package 40.

Furthermore, device die 10, which may be a logic die, often generatesmore heat than memory device dies such as device die 20. Memory diessuffer from severe performance degradation from heat. In accordance withthe embodiments of the present disclosure, DAF 22, which has low thermalconductivity, is used to reduce the heat generated in device die 10 frombeing conducted into device die 20. Rather, the heat in device die 10may be conducted through through-vias 14 to electrical connectors 36.Some of through-vias 14 may also be designed as dummy vias that are notused for electrical connection between device die 10 and electricalconnector 36. The dummy through-vias 14 may be electrically floating,and are used for conducting the heat in device die 10 to electricalconnectors 36.

FIGS. 2A through 4J illustrate cross-sectional views of intermediatestages in the formation of a fan-out package in accordance with someembodiments of the present disclosure. Unless specified otherwise, thematerials and the formation methods of the components in theseembodiments are essentially the same as the like components, which aredenoted by like reference numerals in the embodiments shown in FIGS. 1Athrough 1I. The details regarding the formation process and thematerials of the components shown in FIGS. 2A through 4J (and theembodiments in FIGS. 5 through 10) may thus be found or realized throughthe discussion of the embodiments shown in FIGS. 1A through 1H.

The initial steps of some embodiments are shown in FIGS. 2A and 2B,which are essentially the same as the process steps shown in FIGS. 1Athrough 1C. Through-vias 14 are formed on metal pads 12 of device dies10. Next, wafer 2 is sawed into individual device dies 10.

Referring to FIG. 2C, device die 10 is adhered to carrier 46 throughadhesive film 44. In accordance with some embodiments of the presentdisclosure, carrier 46 is a glass carrier. Although one device die 10 isshown, there is a plurality of device dies 10 placed on carrier 46, anddevice dies 10 may be laid out as an array. Device die 20 is thenadhered to the front surface of device die 10 through DAF 22, as shownin FIG. 2D. In a subsequent step, as shown in FIG. 2E, encapsulatingmaterial 30 is dispensed to encapsulate device dies 10 and 20. Differentfrom the embodiments as shown in FIG. 1E, device die 10 is alsoencapsulated. Since the encapsulation of device dies 10 and 20 isachieved in a single encapsulating process, there is no distinguishableinterface between the upper part (for encapsulating device die 20) andthe bottom part (for encapsulating device die 10) of encapsulatingmaterial 30.

In a subsequent step, as shown in FIG. 2F, dielectric layers 32 and RDLs34 are formed over encapsulating material 30, with RDLs 34 electricallycoupled to metal pillars 28 and through-vias 14. In accordance with someexemplary embodiments, RDLs 34 expand beyond the edges of both devicedies 10 and 20. Accordingly, the embodiments shown in FIG. 2F (comparedto FIG. 1F) may be used in the embodiments in which the top-view area ofdevice die 10 is not large enough to accommodate all of electricalconnectors 36 (FIG. 2I), and hence RDLs 34 need to fan-out from devicedie 10.

Next, carrier 46 is de-bonded from the overlying structure, resulting inthe structure shown in FIG. 2G. A backside grinding may then beperformed to remove adhesive film 44 and to thin device die 10, and theresulting structure is shown in FIG. 2H. In FIG. 2I, IPD 39 may be (ormay not be) bonded to RDLs 34. The resulting composite wafer 38, whichincludes device dies 10, device dies 20, encapsulating material 30,through-vias 14, RDLs 34, and dielectric layers 32, is sawed intoindividual packages 40.

FIGS. 3A through 3J illustrate the formation of fan-out packages 40 inaccordance with some embodiments. Referring to FIG. 3A, wafer 4 isformed, which includes device dies 20 therein. Conductive pads (such asmetal pads) 24 are formed at the front surface 20A of device dies 20.Device die 20 has back surface 20B, which may also be the back surfaceof the respective semiconductor substrate (not shown) therein. Next,referring to FIG. 3B, through-vias 14 are formed, wherein the formationprocess may be similar to the process shown in FIGS. 1B and 1C. Wafer 4is then sawed part into individual device dies 20.

Referring to FIG. 3C, device dies 20 (including 20-1 and 20-2) arepicked and placed on carrier 46 and the overlying adhesive film 44.Adhesive layer 44 may be formed of a Light-to-Heat Conversion (LTHC)material. In addition, DAFs 50 may be used to adhere device dies 20 toadhesive film 44. The distance between device dies 20-1 and 20-2 isselected, so that the space between the through-vias 14 over device die20-1 and the through-vias 14 over device die 20-2 is big enough toaccommodate device die 10 (FIG. 3D). In accordance with some embodimentsof the present disclosure, device dies 20-1 and 20-2 are identical toeach other, and device die 20-1 is rotated by 180 degrees (in a topview) relative to device die 20-2. In accordance with alternativeembodiments, device dies 20-1 and 20-2 are partially identical to eachother, wherein the lower part (of device die 20-1) 20-1-L such as theactive devices and the interconnect structure (not shown) is identicalto the lower part 20-2-L of device die 20-2. The upper parts 20-1-U and20-2-U, which include the top redistribution layer(s) (not shown),however, are different from each other, so that the conductive pads 24in device die 20-1 are concentrated on the left side of device die 20-1,and the conductive pads 24 in device die 20-2 are concentrated on theright side of device die 20-2. In accordance with alternativeembodiments of the present disclosure, device dies 20-1 and 20-2 aredifferent types of dies, and have different structures. In accordancewith alternative embodiments of the present disclosure, device dies 20may include more than two dies, such as four dies, and device die 10 mayinclude more than one die, such as two dies, for the integration ofmultiple logics and multiple memory chips depending on design needs. Inaccordance with alternative embodiments of the present disclosure,device dies 20 may include multi-chips stacked cube structure in eachindividual device dies 20-1, 20-2 (not shown). Each stacked cubestructure may contain such a plurality of chips such as 2-chips to9-chips. In each stacked cube structure, each of the stacked chips maybe a homogeneous functional chip such as a memory functional chip and/ora heterogeneous functional chip such as a logic functional controllerchip. The stacked chips may also be multiple homogeneous memory chips(not shown). The stacked chips may have Through-Silicon Vias (also knownas Through-Substrate Vias, or TSVs), depending on the design needs, suchas a high bandwidth memory (HBM) cube.

Next, referring to FIG. 3D, device die 10 is placed over device dies 20,and is adhered to the front surfaces of device dies 20 through DAF 22. Aportion of device die 10 also overlaps the gap between device dies 20.In accordance with some embodiments, device die 10 includes metalpillars 52 over metal pads 12, with no dielectric layer encircling metalpillars 52. In accordance with alternative embodiments, there is adielectric layer (not shown) at the same level as, and encircling metalpillars 52. In accordance yet alternative embodiments, no metal pillarsare formed over metal pads 12, and metal pads 12 are the top conductivefeatures of device die 10.

FIG. 3E illustrates the encapsulation of device dies 10 and 20 andthrough-vias 14 in encapsulating material 30, followed by a mechanicalgrinding, a Chemical Mechanical Polish (CMP) and/or a combination ofboth to expose metal pillars 52 and through-vias 14. In subsequentsteps, dielectric layers 32 and RDLs 34 are formed, and RDLs 34 areelectrically coupled to metal pillars 52 and through-vias 14, as shownin FIG. 3F. Next, device die 41 may be optionally bonded to RDLs 34(FIG. 3G), and electrical connectors 36 are formed to connect to RDLs 34(FIG. 3H). Device die 41 may include through-vias (sometimes referred toas through-silicon vias or through-substrate vias) penetrating throughthe semiconductor substrate in device die 41. An IPD may also be bondedto RDLs 34 in accordance with some embodiments. Electrical connectors 36may include a solder ball grid array for bonding to a Printed CircuitBoard (PCB). Electrical connectors 36 may also be a flip chip bump suchas C4 solder bump, copper pillar bump, and the like for bonding to apackage substrate (not shown). This configuration may apply to allembodiments throughout the present disclosure.

Carrier 46 is then de-bonded from the overlying structure, and theresulting structure is shown in FIG. 3I. In subsequent steps, devicedies 20-1 and 20-2 are grinded from the backside, and DAFs 50 areremoved through grinding. The resulting structure is shown in FIG. 3J.FIG. 3J further illustrates the attachment of lid 54 to device dies 20,for example, through Thermal Interface Material (TIM) 56. TIM 56 hasthermal conductivity higher than the thermal conductivity of DAFs 22(FIGS. 1I, 2I, and 3J). For example, the thermal conductivity of TIM 56may be higher than about 1 W/m*K or even higher. Lid 54 may be formed ofa material having good thermal conductivity. In accordance with someexemplary embodiments, lid 54 includes a metal such as aluminum, copper,an aluminum/copper alloy, stainless steel, or the like.

FIGS. 4A through 4J illustrate the formation of package 40 (FIG. 4J) inaccordance with some embodiments. These embodiments are essentially thesame as the embodiments shown in FIGS. 3A through 3J, except device die10 does not have the metal pillars 52 (FIG. 3J) that are formed overmetal pads 12. A brief discussion of the formation process is providedbelow. The details of these embodiments may be found in the embodimentsin FIGS. 3A through 3J, and are not repeated herein.

The steps shown in FIGS. 4A through 4C are essentially the same as thesteps shown in FIGS. 3A through 3C. Next, as shown in FIG. 4D, devicedie 10 is adhered to device dies 20 (including 20-1 and 20-2). Devicedie 10 includes metal pads 12 as the top surface conductive features,and no metal pillars are formed over metal pads 12. Device 10 is alsoplaced between the through-vias 14 directly over device die 20-1 and thethrough-vias 14 directly over device die 20-2.

FIG. 4E illustrates the direct formation of encapsulating material 30while exposing metal pads 12 and through-vias 14 without planarization.The process steps shown in FIGS. 4F through 4J are essentially the sameas the process steps shown in FIGS. 3F through 3J, and the details arenot repeated herein.

FIGS. 5 through 10 illustrate the packages formed in accordance withsome embodiments of the present disclosure. The formation process may beunderstood from the embodiments in FIGS. 1A through 4J. The package 40shown in FIG. 5 is similar to the package shown in FIG. 1I, except inFIG. 5, no metal pillars are formed, and metal pads 24 are the topconductive features of die 20. RDLs 34 include vias that are in physicalcontact with metal pads 24.

The package 40 shown in FIG. 6 is similar to the package shown in FIG.2I, except in FIG. 6, no metal pillars are formed, and metal pads 24 arethe top conductive features of die 20. RDLs 34 include vias that are inphysical contact with metal pads 24.

FIG. 7 illustrates package 40, which is similar to the package 40 inFIG. 2I, except device die 20 is partially offset from device die 10.With the partial offset, a first portion of device die 20 overlaps aportion of encapsulating material 30, and does not overlap any portionof device die 10. A second portion of device die 20 overlaps a portionof device die 10. The first portion of device die 20 is thus suspendedwith no underlying support of device die 10. The partial offset ofdevice die 20 relative to device die 10 advantageously reduces theoverlap area of device dies 10 and 20. Accordingly, an increasedpercentage of the top surface area of device die 10 can be used forforming metal pads 12 and through-vias 14, rather than being overlappedby device die 20. The offset of device die 20 from device die 10,however, does not result in the undesirable increase in the form factor(the top-view area) of package 40 in accordance with some embodiments.For example, when the top-view area of package 40 is determined by thearea required to fit all electrical connectors 36, as long as the totalfootprint area of device dies 10 and 20 does not exceed the arearequired to fit all electrical connectors 36, the partial offset ofdevice die 20 from device die 10 will not cause the increase in the formfactor (the top view area). FIG. 8 illustrates package 40 similar towhat is shown in FIG. 7, except no metal pillars are formed over metalpads 24.

FIG. 9 illustrates package 40 in accordance with some embodiments,wherein there are two device dies 10 and two device dies 20 partiallyoffset from the respective device dies 10. Each device die 10 has afirst portion overlapping a portion of a respective underlying devicedie 20, and a second portion offset from the respective underlyingdevice die 20. Through-vias 14 are formed directly on metal pads 24 ofeach of device dies 20.

FIG. 10 illustrates package 40 in accordance with some embodiments,wherein there are four device dies 20 (including 20-3 and 20-4), and onedevice die 10. The four device dies 20 includes two higher-level devicedies 20-4, and two lower-level device dies 20-3 underlying thehigher-level device dies 20-4. Each of the higher-level device dies 20-4has a first portion overlapping a portion of the respective underlyinglower-level device die 20-3, and a second portion offset from therespective underlying lower-level device die 20-3. Four device dies 20are encapsulated in a first encapsulating material 30A in a firstencapsulating process.

Device die 10 is over higher-level device dies 20-4, and is encapsulatedin a second encapsulating material 30B in a second encapsulatingprocess. Device die 10 is partially offset from both higher-level devicedies 20-4. For example, device die 10 has first portions overlappingportions of higher-level device die 20-4, and a second portionoverlapping the gap between higher-level device die 20-4.

Encapsulating materials 30A and 30B may be the same as each other ordifferent from each other. Through-vias 14A are formed directly on metalpads 24A of lower-level device dies 20-3. Some of through-vias 14B areformed directly on metal pads 24B of higher-level device dies 20-4. Theinterface of encapsulating materials 30A and 30B may be distinguishablefrom each other due to the CMP performed on the top surface ofencapsulating material 30A, which causes some of the sphere-shapedfillers 58 in encapsulating material 30A to be grinded to have planar(rather than spherical) top surfaces. On the other hand, thesphere-shaped fillers 60 that are in encapsulating material 30B and incontact with encapsulating material 30A remain to have rounded shapes.Furthermore, due to the nature of the formation process of through-vias14A and 14B, each of through-vias 14A and 14B may have a top widthgreater than the respective bottom width. The transition of through-vias14B to the respective underlying through-vias 14A will also showdiscontinuity, and the top widths of through-vias 14A may be greaterthan the bottom widths of the respective overlying through-vias 14B.

In FIGS. 9 and 10, the partial offset of higher-level die(s) from thelower-level dies results in the advantageous increase in the surfacearea of the lower-level dies 20-3 that can be used for forming metalpads and through-vias. On the other hand, since the lower-level dies20-3 occupy the majority top-view area of package 40, the warpage ofpackage 40 is not severe.

FIGS. 13A, 13B, and 13C illustrate the structures of top conductivefeatures in device dies in accordance with some embodiments of thepresent disclosure. Referring to FIG. 13A, device die S1 is illustrated.In accordance with some embodiments, device die S1 is a logic die, whichmay be a GPU die, a CPU die, a GPU-CPU combo function die, a MCU die, anIO die, a BB die, or an AP die. Although not shown, device die S1 mayinclude a semiconductor substrate, which may be a silicon substrate inaccordance with some embodiments, wherein active devices (not shown)such as transistors and/or diodes are formed at a top surface of thesemiconductor substrate. Furthermore, metal lines and vias (not shown)are formed in an interconnect structure (not shown), which is over thesemiconductor substrate to interconnect the integrated circuit devicesin device die S1.

Metal pads 104 are formed in device die S1. In accordance with someembodiments of the present disclosure, metal pads 104 are aluminum pads,which may also include some copper therein. Metal pads 104 areelectrically coupled to the integrated circuit devices such as activedevices in device die S1.

Passivation layer 106 is formed to have some portions covering the edgeportions of metal pads 104. The central portions of metal pads 104 areexposed through the openings in passivation layer 106. Passivation layer106 may be a single layer or a composite layer, and may be formed of anon-porous material. In accordance with some embodiments of the presentdisclosure, passivation layer 106 is a composite layer comprising asilicon oxide layer (not shown), and a silicon nitride layer (not shown)over the silicon oxide layer. Passivation layer 106 may also be formedof other non-porous dielectric materials such as Un-doped Silicate Glass(USG), silicon oxynitride, and/or the like.

Dielectric layer 108 is formed over passivation layer 106. Dielectriclayer 108 may be a polymer layer formed of a polymer such as polyimide,PBO, BCB, or the like. The formation methods may include spin coating,for example. Dielectric layer 108 may be dispensed in a liquid form, andthen cured. Over dielectric layer 108 may reside dielectric layer 110,which may be formed of a material selected from the same candidatematerials for forming dielectric layer 108, which may include polyimide,PBO, BCB, or the like. In accordance with some embodiments, dielectriclayers 108 and 110 are formed of different materials. For example,dielectric material 108 may be formed of polyimide, and dielectric layer110 may be formed of PBO.

Conductive posts 112 are formed over and connected to metal pads 104.Conductive posts 112 are sometimes referred to as metal pillars or metalposts. In accordance with some embodiments, conductive posts 112 areformed of metallic materials such as copper, nickel, gold, alloysthereof, or multi-layers thereof. Conductive posts 112 extend intodielectric layers 106, 108, and 110. In accordance with someembodiments, the top surface of dielectric layer 110 is coplanar withthe top surfaces of metal posts 112. In accordance with otherembodiments, dielectric layer 110 includes portions covering metal posts112. The portions of dielectric layer 110 covering metal posts 112 maybe removed in the grinding process after device die S1 is molded, aswill be discussed in subsequent processes.

FIG. 13B schematically illustrates the structures of the top conductivefeatures in device die S1 in accordance with alternative embodiments. Inthese embodiments, the top features of device die S1 include metal pads104 and passivation layer 106, wherein the center portions of metal pads104 are exposed. No metal posts are formed over metal pads 104. Rather,the subsequent formed RDLs are directly connected to metal pads 104.

FIG. 13C schematically illustrates the structures of the top conductivefeatures in device die S1 in accordance with alternative embodiments.Device die S1 in accordance with these embodiments are similar to thatis shown in FIG. 13A, except dielectric layer 110 in FIG. 13A is omittedin FIG. 13C. Accordingly, dielectric layer 108, which is the topdielectric layer in device die S1, has a top surface lower than the topsurfaces of metal posts 112.

FIG. 14 illustrates a symbolic view of device die S1. Throughout thedescription, when the device die S1 as shown in FIG. 14 is illustrated,the illustrated device die S1 may actually have the structure as shownin any of FIG. 13A, 13B, or 13C. For example, the illustrated conductivefeatures 114 in device die S1 may represent the metal posts 112 in FIG.13A or 13C, or the metal pads 114 in FIG. 13B. Furthermore, theillustrated dielectric layer 116 in FIG. 14 may represent dielectriclayers 106, 108, and 110 in FIG. 13A, dielectric layer 106 in FIG. 13B,or dielectric layers 106 and 108 in FIG. 13C.

FIGS. 15A through 15J illustrate the cross-sectional views ofintermediate stages in the formation of a fan-out package in accordancewith some embodiments. Referring to FIG. 15A, wafer 120 is formed. Wafer120 includes a plurality of device dies M1 therein. In accordance withsome embodiments of the present disclosure, device dies M1 are logicdies including logic circuits, memory dies, analog dies, sensor dies, orthe like. For example, when device dies M1 are memory dies, device diesM1 may be Flash memory dies, SRAM memory dies, low power DDR dies, orthe like. Although not shown, device dies M1 may include semiconductorsubstrates, wherein active devices such as transistors and/or diodes areformed at the top surfaces of the semiconductor substrates. Furthermore,metal lines and vias (not shown) are formed in the interconnectstructures of device dies M1 to interconnect the integrated circuitdevices in the respective device dies M1. The back surfaces of devicedies M1 may also be the back surfaces of the semiconductor substrates inthe respective device dies M1. Furthermore, the back surfaces of devicedies M1 are adhered to DAFs 22.

Metal pads 122 are formed at the top surfaces (front surfaces) of devicedies M1. Metal pads 122 may be aluminum pads, copper pads, aluminumcopper pads, or the like. In each of device dies M1, metal pads 122 maybe offset from the centers of the respective device dies M1. Forexample, metal pads 122 may be formed in the illustrated left sides ofthe respective device dies M1, and the right sides of device dies M1have no metal pads formed therein.

Through-vias 124 are formed on the top surfaces of device dies M1. Therespective step is illustrated as step 302 in the process flow 300 shownin FIG. 19. In accordance with some embodiments of the presentdisclosure, through-vias 124 are formed using similar methods asillustrated in FIGS. 1B and 1C. Furthermore, the material ofthrough-vias 124 may be selected from the same candidate materials forforming through-vias 14 in FIG. 1C. The details are thus not repeatedherein. Since Through-vias 124 are formed in a single formation process(such as plating), with each for through-vias 124 formed in a singleopening (similar to opening 15 in FIG. 1B), there is no visibleinterface between the upper portions and the respective lower portionsof through-vias 124. Furthermore, the edges of each of through-vias 124may be substantially straight, with no abrupt changes in the tilt angleof the edges. The side profile of through-vias 124 may be verticaland/or tapered, and the top view cross-section shape of through-vias 124may be circular and/or non-circular such as oval, hexagon, octagon, andthe like. For simplification, the features discussed for through-vias124 may apply to all other through-vias through out the presentdisclosure.

In accordance with some embodiments of the present disclosure,through-vias 124 are formed directly on metal pads 122. Accordingly,seed layer may be or may not be used in the formation of through-vias124, and the materials of through-vias 124 are homogenous. In accordancewith alternative embodiments, RDLs (not shown) may be formed close tothe top surfaces of device dies M1, wherein the RDLs are used to rerouteelectrical connections, for example, to the left sides of the respectivedevice dies M1. Through-vias 124 are then formed on the top of the RDLs.In a subsequent step, device dies M1 are singulated from wafer 120 asdiscrete device dies.

FIG. 15B illustrates the formation of wafer 128, which includes devicedies M2 therein. In accordance with some embodiments, device dies M1 andM2 are same type of device dies. For example, device dies M1 and M2 mayboth be SRAM dies. Furthermore, device dies M1 and M2 may have identicalstructures in the bottom parts. For example, the structures and thelayouts of device dies M1 and M2 including low-k dielectric layers (notshown), the metal lines and vias (not shown) in the low-k dielectriclayers, the transistors and memory devices (not shown) may be identicalto each other. The top routing portions of device dies M1 may bedifferent from that of device dies M2, so that the electricalconnections of device dies M2 are routed to the right sides of therespective device dies M2, which is opposite to device dies M1.

The backsides of device dies M2 may also be adhered to DAFs 22. Devicedies M2 also have metal pads 122 formed therein. Through-vias 124 areformed over metal pads 122, for example, through plating. The respectivestep is illustrated as step 304 in the process flow 300 shown in FIG.19. The materials and the formation process of metal pads 122 andthrough-vias 124 may be found referring to the discussion of FIG. 15A,and hence are not repeated herein. Device dies M2 are then singulatedfrom wafer 128 as discrete device dies.

Referring to FIG. 15C, wafer 130 is formed. Wafer 130 includes aplurality of device dies M3 therein. In accordance with some embodimentsof the present disclosure, device dies M3 are logic dies including logiccircuits, memory dies, analog dies, sensor dies, or the like. Whendevice dies M3 are memory dies, device dies M3 may be Flash memory dies,SRAM memory dies, low power DDR dies, or the like. In addition, devicedies M3 may have structures the same as or different from that of devicedies M1 and/or M2.

Metal pads 132 are formed at the top surfaces (front surfaces) of devicedies M3, and may be aluminum pads, copper pads, aluminum copper pads, orthe like. Similar to device dies M1, metal pads 132 may also be offsetfrom the center of the respective device dies M3. For example, metalpads 132 may be formed in the illustrated left sides of the respectivedevice dies M3, and the right sides of device dies M3 have no metal padsformed therein.

Through-vias 134 are formed on the top surfaces of device dies M3, andmay be formed using similar methods (and similar materials) asillustrated in FIGS. 1B and 1C. The respective step is illustrated asstep 306 in the process flow 300 shown in FIG. 19. In accordance withsome embodiments of the present disclosure, through-vias 134 are formeddirectly on metal pads 132. Accordingly, seed layer may be or may not beused in the formation of through-vias 134. In accordance withalternative embodiments, RDLs (not shown) are formed close to the topsurfaces of device dies M3, wherein the RDLs are used to rerouteelectrical connections, for example, to the left sides of the respectivedevice dies M3. Through-vias 134 may then be formed over the reroutingRDLs. Device dies M3 are singulated from wafer 130 as discrete devicedies.

FIG. 15D illustrates the formation of wafer 138, which includes devicedies M4 therein. In accordance with some embodiments, device dies M3 andM4 are the same type of device dies. Furthermore, the relationshipbetween device dies M3 and M4 may be similar to the relationship betweendevice dies M1 and M2. The backsides of device dies M4 may also beadhered to DAFs 22. Device dies M4 also have metal pads 132 formedtherein. Through-vias 134 are formed on metal pads 132. The respectivestep is illustrated as step 308 in the process flow 300 shown in FIG.19. The materials and the formation process of metal pads 132 andthrough-vias 134 may be found referring to the discussion of FIG. 15A,and hence are not repeated herein. Device dies M4 are then singulatedfrom wafer 138 as discrete device dies.

Next, referring to FIG. 15E, device dies M1 and M2 are picked and placedover adhesive film 44, which is over carrier 46 (a glass carrier, forexample). The respective step is illustrated as step 310 in the processflow 300 shown in FIG. 19. Device die M1 is placed on the left side ofdevice die M2, and the through-vias 124 in device die M1 is further onthe left side of device die M1. The through-vias 124 in device die M2 isfurther on the right side of device die M2. Device dies M1 and M2 arespaced apart from each other by distance D1.

Next, as shown in FIG. 15F, device dies M3 and M4 are picked and placed,and are adhered to the front sides of device dies M1 and M2,respectively, through DAFs 22. The respective step is illustrated asstep 312 in the process flow 300 shown in FIG. 19. In accordance withsome embodiments of the present disclosure, device die M3 overlaps theright portion of the respective underlying device die M1, and may or maynot overlap the center of device die M1. Furthermore, through-vias 134of device die M3 are on the left side of the respective device die M3.Device die M4 overlaps the left portion of the respective underlyingdevice die M2, and may or may not overlap the center of device die M2.Furthermore, through-vias 134 of device die M4 are on the right side ofthe respective device die M4.

In accordance with some embodiments of the present disclosure, devicedie M3 has a right portion extending beyond the right edge of device dieM1. Accordingly, the right portion of device die M3 overhangs. Inaccordance with alternative embodiments of the present disclosure, anentirety of device die M3 overlaps device die M1 with no overhang.Device die M4 may have a left portion extending beyond the left edge ofdevice die M2. Accordingly, the left portion of device die M4 overhangs.In accordance with alternative embodiments of the present disclosure, anentirety of device die M4 overlaps device die M2 with no overhang.Device dies M3 and M4 have distance D2, which may be smaller than, equalto, or greater than, distance D1 between device dies M1 and M2.

Next, referring to FIG. 15G, device die S1 is picked and placed overdevice dies M3 and M4, and is adhered to the front surfaces of bothdevice dies M3 and M4 through DAF 22. The respective step is illustratedas step 314 in the process flow 300 shown in FIG. 19. A portion ofdevice die S1 also overlaps the gap between device dies M3 and M4. Inaccordance with some embodiments of the present disclosure, as shown inFIG. 14, device die S1 includes conductive features 114 and surfacedielectric layer 116, which represent the features shown in FIG. 13A,13B, or 13C. In accordance with some embodiments, the top surfaces ofthrough-vias 124 and 134 are higher than, lower than, or level with thetop surfaces of device die S1.

FIG. 15H illustrates the encapsulation of device dies M1, M2, M3, M4, S1and through-vias 124 and 134 in encapsulating material 30, followed by amechanical grinding, a CMP and/or a combination of both to exposeconductive features 114 and through-vias 124 and 134. The respectivestep is illustrated as step 316 in the process flow 300 shown in FIG.19. Since device dies M1, M2, M3, M4, S1 and through-vias 124 and 134are encapsulated through a single encapsulation process, there is nodistinguishable interface (such as horizontal interface) inencapsulating material 30. For example, since a single planarizationprocess is performed on the top surface of encapsulating material 30,and no grinding is performed on the lower portions of encapsulatingmaterial 30, the fillers in encapsulating material 30, which fillers mayinclude spherical particles (such as Al₂O₃ particles), will remain to bespherical. However, the spherical particles that are ground in theplanarization of encapsulating material 30 will have upper portionsremoved during the grinding process, and bottom portions remaining tohave planar top surfaces and rounded bottom surfaces.

As shown in FIG. 15H, each of device dies M3, M4, and S1 may include afirst portion overlapping the respective underlying dies M1/M2, andM3/M4, respectively, and a second portion overlapping encapsulatingmaterial 30. The second portion may not have any device die directlyunderlying it. The height of through-vias of device dies M3 and M4 issmaller than that of device dies M1 and M2 due to stacking.

In subsequent steps, dielectric layers 32 and RDLs 34 are formed, andRDLs 34 are electrically coupled to conductive features 114 andthrough-vias 124 and 134, as shown in FIG. 15I. The respective step isillustrated as step 318 in the process flow 300 shown in FIG. 19. Next,device die C1 may be optionally bonded to RDLs 34 (FIG. 15J), forexample, through flip-chip bonding, hybrid bonding, or surface mounting.Device die C1 may be an Integrated Passive Device (IPD), a memory die,an Application Specific Integrated Circuit (ASIC) die, or the like.Device die C1 may include through-vias (sometimes referred to asthrough-silicon vias or through-substrate vias) penetrating through thesemiconductor substrate in device die C1. An IPD may also be bonded toRDLs 34 in accordance with some embodiments. Next, referring to FIG.15K, electrical connectors 36 are formed to connect to RDLs 34. Therespective step is illustrated as step 320 in the process flow 300 shownin FIG. 19.

Carrier 46 is then de-bonded from the overlying structure, and theresulting structure is shown in FIG. 15K. In subsequent steps, heatdissipating lid 54 is attached to the resulting package, for example,through TIM 56. The respective step is illustrated as step 322 in theprocess flow 300 shown in FIG. 19. Heat dissipating lid 54 may be formedof a material having good thermal conductivity. In accordance with someexemplary embodiments, heat dissipating lid 54 includes a metal such asaluminum, copper, an aluminum/copper alloy, stainless steel, or thelike. Package 40 is thus formed.

FIGS. 16A and 16B illustrate a cross-sectional view and a top view,respectively, of multi-level fan-out package 40 in accordance with someembodiments. These embodiments are similar to the embodiments in FIG.15K, except that device dies M3 and M4 are laid out differently than inFIG. 15K. The formation process of the package 40 shown in FIGS. 16A and16B is essentially the same as shown in FIGS. 15A through 15K, and henceis not repeated herein.

Referring to FIG. 16B, a first straight line 140 interconnecting thecenters of device dies M1 and M2 is in the X-direction. A secondstraight line 142 interconnecting the centers of device dies M3 and M4is in the Y-direction. Accordingly, the aligning directions of devicedies M1 and M2 is perpendicular to the aligning direction of device diesM3 and M4. An advantageous feature of this layout is that there aresmaller portions of devices M3 and M4 overlapping device dies M1 and M2,which yields more surfaces areas of device dies M1 and M2 for formingthrough-vias 124. Also such configuration may lead to symmetric packagelayout for better warpage control and mechanical reliability/stability.FIG. 16A illustrates a cross-sectional view of package 40, wherein thecross-sectional view is obtained from the line containing 16A-16A inFIG. 16B.

As a comparison, in the embodiments shown in FIG. 15A, in a top-view(not shown) of package 40 as shown in FIG. 15K, a first straight line(not shown) interconnecting the centers of device dies M1 and M2 may beparallel to a second straight line (not shown) interconnecting thecenters of device dies M1 and M2.

FIGS. 17A and 17B illustrate a cross-sectional view and a top view,respectively, of multi-level fan-out package 40 in accordance with someembodiments. These embodiments are similar to the embodiments in FIGS.16A and 16B, except that additional device dies S2 and/or S3 are placedoverlapping device dies M3 and M4, respectively. The formation processof the package 40 shown in FIGS. 17A and 17B is essentially the same asshown in FIGS. 15A through 15K, and hence is not repeated herein. Eachof device dies S2 and S3 may be a logic die, a memory die, an IPD, orthe like. Furthermore, the top conductive features of device dies S2 andS3 may be selected from any of the structures shown in FIGS. 13A, 13B,and 13C.

FIGS. 18A, 18B, and 18C illustrate fan-out packages 40 in accordancewith some embodiments. These embodiments are similar to the embodimentsshown in FIG. 1I, except device die 20 in FIG. 1I is replaced withdevice cubes 144 in FIGS. 18A, 18B, and 18C. In FIG. 18A, through-vias14 are distributed on the opposite sides of device cube 144. In FIG.18B, through-vias 14 are distributed on one side (the illustrated rightside, for example), but not on the opposite side, of device cube 144.Furthermore, as shown in FIGS. 18A and 18B, and entirety of device cube144 overlaps device die S1. In FIG. 18C, through-vias 14 are distributedon one side (the illustrated right side, for example), but not on theopposite side, of device cube 144. Furthermore, as shown in FIG. 18C,device cube 144 extends beyond the left edge of device die S1 to overlapencapsulating material 30, and hence yielding more space for formingmetal pads 12 and through-vias 14.

In FIGS. 18A, 18B, and 18C, each of device cubes 144 includes aplurality of device dies MC1, which may be memory dies in accordancewith some embodiments. Device dies MC1 may have identical or differentstructures, with through-vias (not shown) penetrating through thesemiconductor substrates therein. The top conductive features of memorycubes 144 may also adopt any structure shown in FIGS. 13A, 13B, and 13C.Device cube 144 may include stacked multi-chips such as 2-chips to9-chips. In each stacked structure, all stacked chips may be homogeneousfunctional chips such as a memory function chip and/or heterogeneousfunctional chips such as a logic functional controller chip and multiplehomogeneous memory chips (not shown). The stacked chips may havethrough-silicon vias (TSVs) depending the design needs, and may form,for example a high bandwidth memory (HBM) cube.

The embodiments of the present disclosure have some advantageousfeatures. By forming through-vias directly on the metal pads of thelower-level die, package substrate is not used, and the resultingpackage is thin. The thermal decoupling of the logic die and memory dieby using DAF prevents the memory die from the performance degradationcaused by the heat generated in the logic die. The top-view area of thepackage is minimized. A higher-level die and a lower-level die may beencapsulated by a same encapsulation process, and hence the cost and thewarpage of the package are reduced.

In accordance with some embodiments of the present disclosure, a methodincludes forming a first through-via from a first conductive pad of afirst device die, and forming a second through-via from a secondconductive pad of a second device die. The first and the secondconductive pads are at top surfaces of the first and the second devicedies, respectively. The first and the second conductive pads are used asseed layers. The second device die is adhered to the top surface of thefirst device die. The method further includes encapsulating the firstand the second device dies and the first and the second through-vias inan encapsulating material, with the first and the second device dies andthe first and the second through-vias encapsulated in a sameencapsulating process. The encapsulating material is planarized toreveal the first and the second through-vias. Redistribution lines areformed to electrically couple to the first and the second through-vias.

In accordance with some embodiments of the present disclosure, a methodincludes forming a first through-via on a first conductive pad of afirst device die, forming a second through-via on a second conductivepad of a second device die, placing the first device die and the seconddevice die over a carrier, forming a third through-via on a thirdconductive pad of a third device die, and forming a fourth through-viaon a fourth conductive pad of a fourth device die. The method furtherincludes adhering the third device die and the fourth device die to topsurfaces of the first device die and second device die, respectively,and simultaneously encapsulating the first, the second, the third, andthe fourth device dies and the first, the second, the third, and thefourth through-vias in an encapsulating material. The encapsulatingmaterial is planarized to reveal the first, the second, the third, andthe fourth through-vias. Redistribution lines are formed over andelectrically coupling to the first, the second, the third, and thefourth through-vias.

In accordance with some embodiments of the present disclosure, a methodincludes placing a first device die and a second device die over acarrier, wherein the first device die includes a first through-via, andthe second device die includes a second through-via. A third device dieis placed over the first device die. The third device die includes afirst portion overlapping a gap between the first device die and thesecond device die, a second portion overlapping a portion of the firstdevice die, and a third through-via higher than the first portion of thethird device die. In a same encapsulating process, the first, thesecond, and the third device dies and the first, the second, and thethird through-vias are encapsulated in an encapsulating material. Theencapsulating material is planarized to reveal the first through-via,the second through-via, and the third through-via. Redistribution linesare formed over and electrically coupling to the first through-via, thesecond through-via, and the third through-via.

In accordance with some embodiments of the present disclosure, a packageincludes a first device die, a first through-via having a first bottomsurface contacting a top surface of a first conductive pad of the firstdevice die, a second device die having a portion overlapping a portionof the first device die, and a second through-via. The secondthrough-via includes a lower portion at a same level as the first devicedie, and an upper portion at a same level as the second device die. Thelower portion has a second bottom surface contacting a top surface of asecond conductive pad of the second device die. A top surface of theupper portion is coplanar with a top surface of the first through-via,and the lower portion is continuously connected to the upper portionwith no distinguishable interface therebetween. The package furtherincludes an encapsulating material encapsulating the first device die,the second device die, the first through-via, and the second through-viatherein, and redistribution lines over and electrically coupling to thefirst through-via and the second through-via.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A package comprising: a first device diecomprising a first conductive pad; a first through-via having a bottomsurface contacting a top surface of the first conductive pad; a seconddevice die comprising a first portion overlapping a portion of the firstdevice die, and a second portion comprising a second conductive pad,wherein the first through-via comprises: a lower portion at a same levelas the second device die, wherein the lower portion has a bottom surfacecontacting a top surface of the second conductive pad; and an upperportion higher than the second device die, wherein the lower portion iscontinuously connected to the upper portion with no distinguishableinterface therebetween; a second through-via having a bottom surfacecontacting a top surface of the second conductive pad; an encapsulatingmaterial encapsulating the first device die, the second device die, thefirst through-via, and the second through-via therein; andredistribution lines over and electrically coupling to the firstthrough-via and the second through-via.
 2. The package of claim 1,wherein the second device die further comprises an additional portion,with a bottom surface of the additional portion being in contact with atop surface of a portion of the encapsulating material.
 3. The packageof claim 1 further comprising a third device die overlapping a portionof the second device die, wherein a top surface of the third device dieis coplanar with the top surface of the upper portion of the firstthrough-via.
 4. The package of claim 3, wherein a height of the firstthrough-via is greater than a sum of a thickness of the second devicedie and a sum of a thickness of the third device die.
 5. The package ofclaim 1, wherein the upper portion of the first through-via has a topsurface substantially coplanar with a top surface of the secondthrough-via, and wherein the encapsulating material continuously extendsfrom a top level to a bottom level, with the top level being coplanarwith the top surface of the first through-via, and the bottom levelbeing coplanar with a bottom surface of the first device die.
 6. Thepackage of claim 1 further comprising an integrated passive devicebonded to the redistribution lines.
 7. The package of claim 1, whereinno additional conductive feature is between the first through-via andthe first conductive pad.
 8. The package of claim 1 further comprising afourth device die having a portion overlapped by the second device die,and the encapsulating material extends into a space between the firstdevice die and the fourth device die.
 9. The package of claim 1, whereinthe first through-via has a bottom lower than a bottom surface of thesecond device die, and a top higher than a top surface of the seconddevice die.
 10. A package comprising: a first device die comprising afirst portion and a second portion, with the second portion comprising afirst metal pad; a second device die comprising a third portion and afourth portion, with the fourth portion comprising a second metal pad; athird device die overlapping the first portion of the first device dieand the third portion of the second device die; a first through-via overand in contact with the first metal pad; a second through-via over andin contact with the second metal pad; and an encapsulating materialencapsulating the first device die, the second device die, the thirddevice die, the first through-via, and the second through-via therein.11. The package of claim 10, wherein the encapsulating materialcomprises: a first portion at a same level as the first device die; anda second portion at a same level as the third device die, wherein thefirst portion of the encapsulating material is continuously connected tothe second portion of the encapsulating material with no distinguishableinterface therein.
 12. The package of claim 10, wherein theencapsulating material further comprises: a third portion higher thanthe third device die, wherein the second portion of the encapsulatingmaterial is further continuously connected to the third portion of theencapsulating material with no distinguishable interface therein. 13.The package of claim 10 further comprising an adhesive film, wherein thethird device die is adhered to the first device die and the seconddevice die through the adhesive film.
 14. The package of claim 13,wherein the encapsulating material comprises a portion in a spacebetween the first device die and the second device die, wherein theadhesive film further comprises a bottom surface in contact with a topsurface of the portion of the encapsulating material.
 15. The package ofclaim 10, wherein the first through-via and the second through-via areelongated and have substantially straight sidewalls.
 16. The package ofclaim 10 further comprising: a fourth device die over and attached tothe third device die, wherein the fourth device die overlaps a fifthportion of the third device die, and the third device die furthercomprises a sixth portion extending laterally beyond a sidewall of thefourth device die, with the sixth portion comprising a third metal pad;and a third through-via over and contacting the third metal pad, whereinthe fourth device die and the third through-via are encapsulated in theencapsulating material.
 17. The package of claim 16 further comprising adielectric layer having a bottom surface in contact with top surfaces ofthe fourth device die, the first through-via, and the third through-via.18. A package comprising: a first device die comprising a first metalpad; a second device die overlapping a portion of the first device die,wherein the second device die comprises a second metal pad; an adhesivefilm adhering the second device die to the first device die; a firstthrough-via over and contacting the first metal pad, wherein the firstthrough-via is elongated and has substantially straight sidewalls; asecond through-via over and contacting the second metal pad, wherein thesecond through-via is elongated and has substantially straightsidewalls; a third device die overlapping a portion of the second devicedie; and a dielectric layer over the third device die, wherein a bottomsurface of the dielectric layer physically contacts a top surface of thethird device die, a top surface of the first through-via, and a topsurface of the second through-via.
 19. The package of claim 18 furthercomprising an encapsulating material, with the first device die, thesecond device die, the third device die, the first through-via, and thesecond through-via being in the encapsulating material.
 20. The packageof claim 19, wherein the encapsulating material comprises: a firstportion encircling and contacting sidewalls of the first device die; asecond portion encircling and contacting sidewalls of the second devicedie; and a third portion encircling and contacting sidewalls of thethird device die, wherein the first portion, the second portion, and thethird portion of the encapsulating material are continuously joinedtogether with no distinguishable interfaces formed in between.